| PART |
Description |
Maker |
| NL10276AC28-01L |
36 cm 14.1 inches, 1024 x 768 pixels, Full-color, Multi-scan function, Built-in CRT interface board
|
NEC[NEC]
|
| NL10276AC30-04R |
38 cm 15.0 inches, 1024 x 768 pixels, 262,144 colors, LVDS interface, Wide viewing angle, High luminance
|
NEC Corp.
|
| HT10401LHO |
LCD MODULE(1024 × RGB × 768)with AR Coated Glass Optical Bonding
LCD MODULE(1024 隆驴 RGB 隆驴 768)with AR Coated Glass Optical Bonding
|
HYES Optoelectronics, Inc.
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| TM150XG-26L09A |
Lcd module size: 331.6(W) x 254.75(H) x 12.5(T) mm; resolution: 1024 x RGB(W) x 768(H); -0.3 to 4V; TFT color LCD module
|
SANYO
|
| AK5364096D AK5364096G AK5364096S AK5364096W AK5364 |
32,768 x 32 Bit CMOS/BiCMOS Static Random Access Memory 32,768 × 32位的CMOS / BiCMOS工艺静态随机存取存储器
|
Accutek Microcircuit Corporation
Accutek Microcircuit, Corp.
|
| TH7888A TH7888ACBHRB TH7888AVRHRB |
From old datasheet system
AREA ARRAY CCD IMAGE SENSOR 1024 X 1024 PIXELS WITH ANTIBLOOMING
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| AD5174BRMZ-10-RL7 AD5174BCPZ-10-RL7 |
Single-Channel, 1024-Position, Digital Rheostat with SPI Interface and 50-TP Memory, Package: 10 ld MSOP, 10 Pin, Temp: Ind 10K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO10
10K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO10 3 X 3 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, LFCSP-10
|
Analog Devices, Inc.
|
| S9737-01 S9737-02 S9737-03 S9737 |
CCD area image sensor 1024 × 1024 pixels, front-illuminated FFT-CCDs
CCD area image sensor 1024 】 1024 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Corporation
|
| KAC-1310 |
1280 (H) x 1024 (V) SXGA CMOS Image Sensor 1280（高）x 1024（五）SXGA CMOS图像传感
|
Electronic Theatre Controls, Inc.
|
| KT872N15 KT872N55 KT872P51 KT872P55 KT872T55 KT872 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter .
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture in front of sensor .050inches. Aperture width in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320inches. Aperture in front of sensor .050inches. Aperture in front of emitter .050i
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture width in front of sensor .050inches. Aperture in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .0
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
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Optek Technology
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